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Sumita, Taishi*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Kuwajima, Saburo*
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.667 - 670, 2005/00
no abstracts in English
Oshima, Takeshi; Imaizumi, Mitsuru*; Takamoto, Tatsuya*; Sumita, Taishi*; Oi, Akihiko; Kawakita, Shiro*; Ito, Hisayoshi; Matsuda, Sumio*
Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.113 - 116, 2002/10
The effects on proton and electron irradiateions of the characteristics of InGaP/GaAs/Ge triple junction designed for terrestrial application were studied. The solar cells used in this study has a 1% In-contained GaAs middle sub-cell, and their efficiency is more than 30 % under AM1.5, which is the highest efficiency of all solar cells in the world.As the results of 1MeV-electron and 10 MeV-proton irradiation, terrestrial triple-junction sole cells were found to have the same radiation resistance as space single junction GaAs solar cells, although terrestrial triple-junction solar cells is not stronger than space triple-junction solar cells made in USA. As the result of proton energy dependence of the electrical characteristics and quantum efficiency, the strong degradation of the GaAs middle cell was observed.